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Freescale Semiconductor Technical Data
Document Number: MRF5S19090H Rev. 2, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.8% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset -- - 51 dB in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19090HR3 MRF5S19090HSR3
1930- 1990 MHz, 18 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF5S19090HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF5S19090HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 266 1.52 - 65 to +200 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 65 W CW Case Temperature 78C, 18 W CW Symbol RJC Value (1,2) 0.66 0.68 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19090HR3 MRF5S19090HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.7 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.7 3.7 0.26 5 3.5 -- -- -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 18 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz,2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 13.5 24 -- -- -- 14.5 25.8 - 37 - 51 - 14.5 -- -- - 35 - 48 -9 dB % dBc dBc dB
MRF5S19090HR3 MRF5S19090HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS + R1 R2 C3 C4 C5 R3 + C7 C8 + C13
W1 VSUPPLY C11 R4 C12 + C9 + C10
C6 Z9 Z6 RF INPUT Z1 Z2 C15 Z3 C14 C1 Z4 Z5 Z7 DUT Z8 Z10 Z11 Z12 C2 Z13 RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.140 x 0.080 Microstrip 0.450 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.636 x 0.141 Microstrip 0.340 x 0.050 Microstrip 0.320 x 1.401 Microstrip
Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.091 x 1.133 Microstrip 0.542 x 0.071 Microstrip 0.450 x 1.133 Microstrip 0.640 x 0.141 Microstrip 0.316 x 0.080 Microstrip 1.209 x 0.080 Microstrip Arlon GX - 0300- 55- 22, 0.030, r = 2.55
Figure 1. MRF5S19090HR3(HSR3) Test Circuit Schematic Table 5. MRF5S19090HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1 C2 C3, C13 C4, C12 C5, C11 C6, C7 C8 C9, C10 C14 C15 R1 R2 R3, R4 W1 Short RF Bead 22 pF Chip Capacitor 10 pF Chip Capacitor 1 F, 50 V SMT Tantalum Capacitors 0.1 F Chip Capacitors 1k pF Chip Capacitors 4.3 pF Chip Capacitors 10 F, 35 V SMT Tantalum Capacitor 22 F, 35 V SMT Tantalum Capacitors 2.7 pF Chip Capacitor 0.6 - 4.5 Gigatrim Variable Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors 1 turn 14 gauge wire Description Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark Garrett Electronics
MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 3
C8 C7 VGG R1 B1 R2 C3 C4C5 CUT OUT AREA R3 C6 W1 C11 C12 R4
C13
VDD
C9 C2
C10
C1
C14 C15
MRF5S19090 Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5S19090HR3(HSR3) Test Circuit Component Layout
MRF5S19090HR3 MRF5S19090HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 16 Gps 14 G ps , POWER GAIN (dB) D VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 30 40
12 IRL IM3 8 ACPR
20
10
-20
IM3 (dBc), ACPR (dBc)
0 -10 -20 -30 -40 -50
-40
6 -60 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
17 IDQ = 1300 mA G ps , POWER GAIN (dB) 16 1100 mA 850 mA 650 mA 14 450 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 650 mA IDQ = 450 mA 1100 mA 1300 mA 850 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurement, 2.5 MHz Tone Spacing
15
13
12
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-25 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA 3rd Order -35 -40 -45 7th Order -50 -55 0.1 1 TWO-TONE SPACING (MHz) 10 Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz Pout , OUTPUT POWER (dBm) -30
56 55 54 53 52 51 50 49 48 47 46 45 31 32 33 34 35 VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 36 37 38 39 40 41 42 Actual P1dB = 50.82 dBm (120.78 W) P3dB = 51.21 dBm (132.13 W) Ideal
5th Order
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power MRF5S19090HR3 MRF5S19090HSR3
RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps D ACPR IM3 VDD = 28 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) IM3 -30 D IM3 (dBc), ACPR (dBc) -35 -40 -45 -50 -55 -60 -65 MTTF FACTOR (HOURS X AMPS2) -25 109
108
107
106 100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTBF in a particular application.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -7.5 -ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW -IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW
1.2288 MHz Channel BW
Figure 10. 2 - Carrier CCDF N - CDMA
-6
-4.5
-3
-1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 11. 2 - Carrier N - CDMA Spectrum
MRF5S19090HR3 MRF5S19090HSR3 6 RF Device Data Freescale Semiconductor
f = 1990 MHz Zload f = 1930 MHz
Zo = 10
f = 1990 MHz
f = 1930 MHz
Zsource
VDD = 28 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz 1930 1960 1990 Zsource 2.98 - j5.12 3.36 - j4.65 4.06 - j4.64 Zload 2.07 - j1.31 2.02 - j1.18 1.93 - j1.01
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 7
NOTES
MRF5S19090HR3 MRF5S19090HSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF5S19090HR3 MRF5S19090HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF5S19090HR3
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF5S19090HSR3
MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 11
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MRF5S19090HR3 MRF5S19090HSR3
Rev. 12 2, 5/2006 Document Number: MRF5S19090H
RF Device Data Freescale Semiconductor

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